NAND based resistive sense memory cell architecture

ABSTRACT

Various embodiments are directed to an apparatus comprising a semiconductor memory array with non-volatile memory unit cells arranged into a NAND block. Each of the unit cells comprises a resistive sense element connected in parallel with a switching element. The resistive sense elements are connected in series to form a first serial path, and the switching elements are connected in series to form a second serial path parallel to the first serial path. Each resistive sense element is serially connected to an adjacent resistive sense element in the block by a tortuous conductive path having a portion that extends substantially vertically between said elements to provide operational isolation therefor.

BACKGROUND

Data storage devices generally operate to store and retrieve data in afast and efficient manner. Some storage devices utilize a semiconductorarray of solid-state memory cells to store individual bits of data. Suchmemory cells can be volatile or non-volatile. Volatile memory cellsgenerally retain data stored in memory only so long as operational powercontinues to be supplied to the device. Non-volatile memory cellsgenerally retain data stored in memory even in the absence of theapplication of operational power.

So-called resistive sense memory (RSM) cells can be configured to havedifferent electrical resistances to store different logical states. Theresistance of the cells can be subsequently detected during a readoperation by applying a read current and sensing a signal in relation toa voltage drop across the cell. Exemplary types of RSM cells includeresistive random access memory (RRAM), magnetic random access memory(MRAM), and spin-torque transfer random access memory (STTRAM or STRAM).

SUMMARY

Various embodiments of the present invention are generally directed toan apparatus generally comprising a semiconductor memory array withnon-volatile memory unit cells arranged into a NAND block.

In accordance with some embodiments, the apparatus generally comprisesserially connected memory unit cells to form a NAND block, each of theunit cells comprising a resistive sense element connected in parallelwith a switching element. The resistive sense elements are connected inseries to form a first serial path, and the switching elements areconnected in series to form a second serial path parallel to the firstserial path. Each resistive sense element is serially connected to anadjacent resistive sense element in the block by a tortuous conductivepath having a portion that extends substantially vertically between saidelements to provide operational isolation therefor.

In accordance with other embodiments, the apparatus generally comprisesserially connected memory unit cells, each unit cell comprising aresistive sense element connected in parallel with a switching element,and first means for connecting the unit cells into a NAND block tooperationally isolate each of the resistive sense elements within saidblock.

These and various other features and advantages which characterize thevarious embodiments of the present invention can be understood in viewof the following detailed discussion in view of the accompanyingdrawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a generalized functional representation of an exemplary datastorage device constructed and operated in accordance with variousembodiments of the present invention.

FIG. 2 shows circuitry used to read data from and write data to a memoryarray of the device of FIG. 1.

FIG. 3 generally illustrates a manner in which data may be written to amemory cell of the memory array.

FIG. 4 generally illustrates a manner in which data may be read from thememory cell of FIG. 3.

FIG. 5 shows an exemplary construction of a resistive sense memory (RSM)cell characterized as a spin-torque transfer random access memory(STTRAM or STRAM) cell.

FIG. 6 shows an exemplary construction of a resistive sense memory (RSM)cell characterized as a resistive random access memory (RRAM) cell.

FIG. 7 provides a schematic representation of a NAND based block ofmemory cells in accordance with various embodiments.

FIG. 8 provides another schematic arrangement of FIG. 7.

FIG. 9 provides a corresponding side elevational layout representationof the circuitry of FIG. 8.

FIG. 10 shows a portion of the layout representation of FIG. 9 ingreater detail.

FIG. 11 provides a top plan representation of the layout of FIG. 9.

DETAILED DESCRIPTION

FIG. 1 provides a functional block representation of a data storagedevice 100 constructed and operated in accordance with variousembodiments of the present invention. The data storage device iscontemplated as comprising a portable non-volatile memory storage devicesuch as a PCMCIA card or USB-style external memory device. It will beappreciated, however, that such characterization of the device 100 ismerely for purposes of illustration and is not limiting to the claimedsubject matter.

Top level control of the device 100 is carried out by a suitablecontroller 102, which may be a programmable or hardware basedmicrocontroller. The controller 102 communicates with a host device viaa controller interface (I/F) circuit 104 and a host I/F circuit 106.Local storage of requisite commands, programming, operational data, andthe like is provided via random access memory (RAM) 108 and read-onlymemory (ROM) 110. A buffer 112 serves to temporarily store input writedata from the host device and readback data pending transfer to the hostdevice, as well as to facilitate serialization/deserialization of thedata during a transfer operation. The buffer can be located in anysuitable location, including in a portion of the array.

A memory space is shown at 114 to comprise a number of memory arrays 116(denoted Array 0-N), although it will be appreciated that a single arraycan be utilized as desired. Each array 116 preferably comprises a blockof semiconductor memory of selected storage capacity. Communicationsbetween the controller 102 and the memory space 114 are coordinated viaa memory (MEM) I/F 118. As desired, on-the-fly error detection andcorrection (EDC) encoding and decoding operations are carried out duringdata transfers by way of an EDC block 120, and defect management (DM)functions are carried out by block 121.

While not limiting, in an embodiment the various circuits depicted inFIG. 1 are arranged as a single chip set formed on one or moresemiconductor dies with suitable encapsulation, housing andinterconnection features (not separately shown for purposes of clarity).Input power to operate the device is handled by a suitable powermanagement circuit 122 and is supplied from a suitable source such asfrom a battery or AC power input. Power can also be supplied to thedevice 100 directly from the host such as through the use of a USB-styleinterface.

Any number of data storage and transfer protocols can be utilized, suchas logical block addressing (LBAs) whereby data are arranged and storedin fixed-size blocks (such as 512 bytes of user data plus overhead bytesfor ECC, sparing and header information). Host commands can be issued interms of LBAs, and the device 100 can carry out a correspondingLBA-to-PBA (physical block address) conversion to identify and servicethe associated locations at which the data are to be stored orretrieved. These and other features will be discussed in detail below.

FIG. 2 provides a generalized representation of selected aspects of thememory space 114 of FIG. 1. Data are stored in each array as anarrangement of rows and columns of memory cells 124, accessible byvarious row (word) and column (bit) lines. The actual configurations ofthe cells and the access lines thereto will depend on the requirementsof a given application. Generally, however, it will be appreciated thatthe various control lines will include enable lines that selectivelyenable and disable the respective writing and reading of the value(s) ofthe individual cells.

Control logic 126 receives and transfers data, addressing informationand control/status values along multi-line bus paths 128, 130 and 132,respectively. X and Y decoding circuitry 134, 136 provide appropriateswitching and other functions to access the appropriate cells 124. Asdesired, adjacent arrays can be configured to share a single Y (row)decoder 136 to reduce RC delay effects along an associated word line.

A write circuit 138 represents circuitry elements that operate to carryout write operations to write data to the cells 124, and a read circuit140 correspondingly operates to obtain readback data from the cells 124.Local buffering of transferred data and other values can be provided viaone or more local registers 144. At this point it will be appreciatedthat the circuitry of FIG. 2 is merely exemplary in nature, and anynumber of alternative configurations can readily be employed as desireddepending on the requirements of a given application.

The memory cells 124 are characterized as so-called resistive sensememory (RSM) cells. As used herein, RSM cells are generally described ascells configured to have different electrical resistances which are usedto store different logical states. The resistance of the cells can besubsequently detected during a read operation by applying a read currentand sensing a signal in relation to a voltage drop across the cell.Exemplary types of RSM cells include resistive random access memory(RRAM), magnetic random access memory (MRAM), spin-torque transferrandom access memory (STTRAM or STRAM), etc.

Advantages of RSM cells over other types of non-volatile memory cellssuch as EEPROM and flash include the fact that no floating gate isprovided in the cell construction. No erase operation is necessary priorto the writing of new data to an existing set of cells. Rather, RSMcells can be individually accessed and written to any desired logicalstate (e.g., a “0” or “1”) irrespective of the existing state of the RSMcell. Also, write and read power consumption requirements aresubstantially reduced, significantly faster write and read times can beachieved, and substantially no wear degradation is observed as comparedto erasable cells, which have a limited write/erase cycle life.

Data are written to the respective RSM memory cells 124 as generallydepicted in FIG. 3. A write power source 146 applies the necessary input(such as in the form of a current, a voltage, a magnetization) toconfigure the memory cell 124 to a desired state. It can be appreciatedthat FIG. 3 is merely a representative illustration of a bit writeoperation.

The configuration of the write power source 146, memory cell 124, andreference node 148 can be suitably manipulated to allow the writing ofdata to the array. Depending on the orientation of the applied power,the cell 124 may take either a relatively low resistance (R_(L)) or arelatively high resistance (R_(H)). While not limiting, exemplary R_(L)values may be in the range of about 100 ohms (Ω) or so, whereasexemplary R_(H) values may be in the range of about 100KΩ or so. Thesevalues are retained by the respective cells until such time that thestate is changed by a subsequent write operation. While not limiting, inthe present example it is contemplated that a high resistance value(R_(H)) denotes storage of a logical 1 by the cell 124, and a lowresistance value (R_(L)) denotes storage of a logical 0.

The logical bit value(s) stored by each cell 124 can be determined in amanner such as illustrated by FIG. 4. A read power source 150 applies anappropriate input (e.g., a selected read voltage) to the memory cell124. The amount of read current I_(R) that flows through the cell 124will be a function of the resistance of the cell (R_(L) or R_(H),respectively). In the case of STRAM, as well as other types of memoryconfigurations such as RRAM, the read current magnitude will begenerally be significantly lower than the write current magnitudeutilized to set the storage state of the bit. The voltage drop acrossthe memory cell (voltage V_(MC)) is sensed via path 152 by the positive(+) input of a comparator 154. A suitable reference (such as voltagereference V_(REF)) is supplied to the negative (−) input of thecomparator 154 from a reference source 156.

The reference voltage V_(REF) is preferably selected such that thevoltage drop V_(MC) across the memory cell 124 will be lower than theV_(REF) value when the resistance of the cell is set to R_(L), and willbe higher than the V_(REF) value when the resistance of the cell is setto R_(H). In this way, the output voltage level of the comparator 154will indicate the logical bit value (0 or 1) stored by the memory cell124. The reference voltage can be generated and supplied externally, orcan be generated locally using dummy reference cells or a self-referenceoperation, as desired.

FIG. 5 generally illustrates a magnetic tunneling junction (MTJ) 160 ofa selected one of the RSM memory cells 124, characterized as an STRAMmemory cell. The MTJ includes two ferromagnetic layers 162, 164separated by an oxide barrier layer 166 (such as magnesium oxide, MgO).The resistance of the MTJ 160 is determined in relation to the relativemagnetization directions of the ferromagnetic layers 162, 164: when themagnetization is in the same direction (parallel), the MTJ is in the lowresistance state (R_(L)); when the magnetization is in oppositedirections (anti-parallel), the MTJ is in the high resistance state(R_(H)).

In some embodiments, the magnetization direction of the reference layer162 is fixed by coupling to a pinned magnetization layer (e.g., apermanent magnet, etc.), and the magnetization direction of the freelayer 164 can be changed by passing a driving current polarized bymagnetization in the reference layer 162. To read the logic state storedby the MTJ 160, a relatively small current is passed through the MTJbetween a source line (SL) and a bit line (BL). Because of thedifference between the low and high resistances of the MTJ in therespective logical 0 and 1 states, the voltage at the bit line will bedifferent, and this is sensed as set forth above in FIG. 4.

FIG. 6 generally illustrates an alternative embodiment of the RSM cells124 in which an RRAM construction is used. An RRAM cell 170 includesopposing electrode layers 172, 174 and an oxide layer 176. The oxidelayer 176 may be configured to have a nominally high resistance (e.g.,R_(H)). The resistance of the oxide layer, however, can be lowered(e.g., R_(L)) through application of a relatively high write voltageacross the RRAM cell 170. Such voltage generates lower resistance paths(filaments) as components of a selected electrode layer 172, 174 migrateinto the oxide layer 176.

The oxide layer 176 can be restored to its original, higher resistancethrough application of a corresponding voltage of opposite polarity. Aswith the MTJ 160 of FIG. 5, the storage state of the RRAM cell 170 ofFIG. 6 can be read by passing a read current from a source line (SL) toa bit line (BL), and sensing the resistance of the cell in a manner suchas shown in FIG. 4.

In some embodiments, each RSM memory cell 124 stores a single logicalbit value (e.g., 0 or 1) in relation to the resistive state of theassociated cell. In other embodiments, each memory cell 124 isconfigured to store multiple bits. For example, a memory cell configuredto provide four different statuses (e.g., four different resistancelevels R0 to R3), this cell can be used to store two bits (e.g., R0=00;R1=01; R2=10; R3=11). More generally, if a memory cell can store 2^(N)different statuses, it can be used to store up to N bits. For clarity ofillustration, the following discussion will contemplate the use ofsingle-bit storage configuration for the memory cells 124, andmodifications to accommodate multi-bit storage configurations willreadily occur to the skilled artisan in view thereof.

FIG. 7 provides a schematic representation of a number of RSM cells 124(cells 1 to N) that have been grouped together into a NAND based block180. Each of the RSM cells 124 has a corresponding switching element 182connected in parallel with the cell. Each switching element 182 ischaracterized as a field effect transistor with respective gate (G) 184,source (S) 186 and drain (D) 188 regions, although other configurationsfor the switching elements can be utilized as desired. For reference,the cells 124 are also referred to herein as “resistive sense elements.”

Adjacent switching elements 182 share common source/drain regions in theconfiguration of FIG. 7. While not limiting, in some embodiments therespective transistors are characterized as n-type MOSFETs which arenormally nonconductive from source to drain in a deactivated state, andbecome conductive when a suitable gate control voltage is applied.

Each cell/switching element pair 124, 182 is referred to herein as aunit cell 190. The unit cells 190 are connected in series between asource line (SL) 192 and a bit line (BL) 194. This connectionarrangement places the RSM cells 124 in a first serial path between theSL 192 and the BL 194. A second serial path between the SL 192 and theBL 194 is formed by the switching elements 182, with the second serialpath in parallel with the first path.

Word lines (WL) 196 denoted WL-1 to WL-N are coupled to the respectivegates 184 of the switching elements 182. In some embodiments, the SL 192and BL 194 extend in parallel fashion across the array 116 in a firstdirection (e.g., the y-direction). The WLs 196 extend in parallelfashion across the array 116 in a second direction (e.g., thex-direction) normal to the first direction.

A block select switching element 198, also characterized as a fieldeffect transistor, is arranged in series between the unit cells 190 andthe SL 192. A block select line 199 extends across the array 116 in thesecond direction and is coupled to the gate 184 of the block selectswitching element 198. In some embodiments, multiple adjacent blocks arearranged within the array 116, each having its own switching element andselect line to enable each block to be individually selected in turn.

A manner in which a particular RSM cell 124 can be accessed will now bedescribed, using the “RSM 1” cell as an example. First, the associatedblock select switching element 198 is asserted by application of asuitable control voltage from the block select line 199 to theassociated gate 184. This places the switching element 198 in aconductive state. Word lines WL-2 through WL-N are provided withsuitable control voltages to place the switching elements 182 of thenon-selected unit cells 190 (RSM 2-N) into conductive states. The wordline WL-1 remains unactivated, so that the switching element 182adjacent RSM 1 remains in a nonconductive state.

To read the resistance state of the RSM 1 cell, a read current is passedfrom the source line SL 192, through the block select switching element198, through the RSM 1 cell, and through the lower resistance switchingelements 182 for cells 2-N to the bit line 194. A sense amplifier (suchas 154 in FIG. 4) is connected to the bit line 194 to sense theassociated resistance of the RSM 1 cell. Each of the resistance valuesof the remaining cells can be sequentially sensed in this manner byappropriately configuring the word lines 196.

The resistance of the RSM 1 cell is written to a desired state bymaintaining the above select line and word line configuration, and thenapplying the appropriate current and/or voltage between the source line192 and the bit line 194. Charge pumps or other techniques can beutilized to ensure sufficient voltage is present at the gates 184 of theconductive switching elements 2-N. In other embodiments, the switchingelements 182 can be alternately configured to be normally conductive, inwhich case the word line for the selected cell (in this case, word lineWL-1) is provided with a suitable control voltage to render theassociated transistor in a non-conductive state while the remaining wordlines WL-2 through WL-N are unactivated.

The NAND based arrangement of RSM cells as set forth by FIG. 7 providesseveral advantages over prior arrangements, including fast read andwrites, low power consumption, good scaling capabilities and increasedmemory cell densities. It is contemplated that unit cell geometries onthe order of 4F² (2F×2F) can be achieved, where F is a minimum featuredimension of a given manufacturing process.

FIG. 8 provides another schematic representation for a NAND block 200generally similar to the block 180 of FIG. 7. As before, the block 200includes a number of unit cells 190, in this case 8, each comprising anRSM cell 124 in parallel with a switching element 182. It will beappreciated that the exemplary NAND blocks 180, 200 set forth herein cancomprise any number of unit cells, including but not limited to anentire addressable sector's worth of cells, where a sector correspondsto a host level logical block address (LBA), etc. For reference, the RSMcells are denoted from R1 to R8.

FIG. 9 shows a corresponding cross-sectional representation of a portionof a selected array 116 that generally corresponds to the schematic ofFIG. 8. Like reference numerals are utilized in FIGS. 8-9 to denotecorresponding structures. A base substrate of semiconductor material isdenoted at 210. Localized n+ doped regions are identified at 212 toalternately form the aforementioned shared source and drain regions 186,188 for adjacent switching devices 182. Isolated gate electrodes 214span adjacent doped regions 212 to form the aforementioned gates 184 ofthe switching devices 182. Although not shown in FIG. 9, it will beappreciated that the respective word lines 198 of FIG. 8 are alignedwith and coupled to the gate electrodes 214.

Conductive support structures 216 extend upwardly in a substantiallyvertical fashion from each of the doped regions 212 to substantiallyhorizontal conductive contact structures 218. Each pair of adjacentstructures 216, 218 generally forms a t-shaped conductive path, with thecontact structures 218 each forming a “cross-bar” electrode for eacht-shaped structure. The RSM cells 124 are formed adjacent a first end ofeach of the cross-bar structures 218. Second conductive supportstructures 220 extend upwardly from an opposing second end of each ofthe cross-bar structures 218, except for a last structure 218A at thefar right of FIG. 9 adjacent the block select transistor 198, which doesnot support a second conductive support structure 220.

Third conductive contact structures 222 extend upwardly from each RSMcell 124, as shown. The third conductive contact structures 222 may notbe necessary in situations where the heights of the RSM cells arenominally equal to the heights of the second conductive supportstructures 220. A second set of substantially horizontal conductivecontact structures 224 (electrodes) bridge across adjacent ones of thesecond support structures 220 and the RSM cells/third contact structures124, 222.

Other configurations of the unit cells 190 are readily envisioned andwill occur to the skilled artisan in view of the present discussion, sothe configuration of FIG. 9 is exemplary and not necessarily limiting tothe scope of the claimed subject matter. Nevertheless, it will beappreciated that the configuration of FIG. 9 provides n resistive cells124 (in this case, n=8) that are serially connected by n−1 (in thiscase, n−1=7) intervening tortuous conductive paths.

FIG. 10 shows a portion of the structure of FIG. 9 in greater detail. InFIG. 10, the resistive sense memory cells 124 are characterized astaking the RRAM configuration of FIG. 6, although as noted above, othercell configurations can be utilized. An exemplary one of the tortuousconductive paths is denoted in cross-hatch fashion at 226, and includesthe first and second electrode layers 218, 224 and the second and thirdsupport structures 220, 224. This path 226 takes a substantially z-shapeand connects the lower RRAM electrode 176 of cell 124A to the upper RRAMelectrode 172 of cell 124B.

In this way, each path 226 has a portion that extends substantiallyvertically between adjacent cells to operationally isolate the cells onefrom another, by serving as a high current density shielding layerbetween the adjacent cells. With reference again to FIG. 9, it will benoted that each individual cell has these conductive isolation layersbetween itself and the respective, immediately adjacent cells in theblock 200, the isolation layers extending upwardly across and beyond thecommon height of the respective cells.

FIG. 11 shows a top plan representation of the block 200 of FIG. 9 inconjunction with additional adjacent blocks 230, 240 and 250(respectively denoted as BLOCKS 1-4). Word lines 196 WL1-WL8 extend inthe x-direction in spaced apart relation as shown. Block select lines199 for the BLOCKS 1-4 also run along the x-direction and can be stackedin the vertical direction (with associated isolation layerstherebetween). Source lines SL 192 and bit lines BL 194 are shownside-by-side for each of the BLOCKS 1-4, but these can also be stackedin the vertical direction as desired.

It will now be appreciated that various embodiments presented hereinprovide a number of advantages over the prior art. The exemplaryarchitectures of FIGS. 7-10 provide substantially improves operationalisolation of each RSM cell 124. Only a single RSM cell is coupled toeach of the electrode structures 218, so the application of writecurrents and/or voltages to a selected RSM cell are not presented to animmediately adjacent cell that shares the same electrode as the selectedcell.

A vertically extending conductive structure 220 is interposed betweeneach adjacent pair of the RSM cells, which further advantageously servesto shield electrical or magnetic fields applied to a given cell fromaffecting adjacent cells, as well as serves to provide improvedconductivity paths to each cell.

It is to be understood that even though numerous characteristics andadvantages of various embodiments of the present invention have been setforth in the foregoing description, together with details of thestructure and function of various embodiments of the invention, thisdetailed description is illustrative only, and changes may be made indetail, especially in matters of structure and arrangements of partswithin the principles of the present invention to the full extentindicated by the broad general meaning of the terms in which theappended claims are expressed.

1. An apparatus comprising a NAND block of non-volatile memory unitcells in a semiconductor memory array, each of the unit cells comprisinga resistive sense element connected in parallel with a switchingelement, wherein the resistive sense elements are connected in series toform a first serial path and the switching elements are connected inseries to form a second serial path parallel to the first serial path,and wherein each resistive sense element is serially connected to anadjacent resistive sense element in the block by a tortuous conductivepath having a portion that extends substantially vertically therebetweento provide operational isolation of said element, the resistive senseelements of the block each having a nominally common height at aselected elevation above a base substrate, and the portion of thetortuous path that extends substantially vertically between eachadjacent pair of the resistive sense elements extending upwardly acrosssaid common height.
 2. The apparatus of claim 1, wherein the tortuouspath between each adjacent pair of the resistive sense elements in theblock has a substantially z-shaped configuration with a firstsubstantially horizontal electrode layer coupled to a lower end of afirst element of said pair, a second substantially horizontal electrodelayer coupled to an upper end of a second element of said pair, andwherein said portion that extends substantially vertically between saidpair is connected between the first and second electrode layers.
 3. Theapparatus of claim 1, wherein the resistive sense elements arecharacterized as resistive random access memory (RRAM) memory cells. 4.The apparatus of claim 1, wherein the resistive sense elements arecharacterized as spin-torque transfer random access memory (STRAM)memory cells.
 5. The apparatus of claim 1, wherein the switchingelements are characterized as field effect transistors, and wherein eachadjacent pair of said transistors shares a common source or drainregion, respectively, formed in a base substrate.
 6. The apparatus ofclaim 1, wherein the NAND block further comprises a block selectswitching element connected in series with the respective first andsecond serial paths, configured to selectively establish a conductivepath through the NAND block from a source line to a bit line.
 7. Theapparatus of claim 6, further comprising a plurality of spaced apart,substantially parallel word lines respectively connected to theswitching elements.
 8. The apparatus of claim 7, wherein a block selectline is connected to the block select switching element to provide acontrol voltage thereto, the block select line nominally parallel to theword lines and nominally perpendicular to the respective source and bitlines.
 9. The apparatus of claim 1, wherein the NAND block ischaracterized as a first NAND block, and wherein the semiconductormemory array further comprises a plurality of additional NAND blockseach nominally identical to the first NAND block and each individuallyselectable to access the associated resistive sense elements therein,each of the first and plurality of additional NAND blocks connectedacross a common set of word lines that extend across the semiconductormemory array.
 10. The apparatus of claim 1, further comprising a basesubstrate on which the adjacent switching elements are formed, eachadjacent pair of the switching elements alternately sharing a commonsource region or drain region extending into the base substrate to formthe second serial path.
 11. The apparatus of claim 10, furthercomprising: a plurality of first conductive support structures eachextending substantially vertically from an associated one of said commonsource or drain regions in the base substrate; and a correspondingplurality of substantially horizontal conductive first electrode layers,each said first electrode layer coupled to a distal end of an associatedone of the first conductive support structures, wherein each firstelectrode layer supports a single selected one of the resistive senseelements and a second conductive support structure which extendssubstantially vertically therefrom, wherein at least the first electrodelayer and the second conductive support structure forms the tortuousconductive path.
 12. The apparatus of claim 1, further comprising acontroller coupled to the semiconductor memory array which directs anaccess operation upon a selected unit cell of the NAND block todetermine a storage state thereof by placing a block select switchingelement of the NAND block into a conductive state, placing the switchingelement of the selected unit cell into a non-conductive state whileplacing the remaining switching elements of the remaining unit cellsinto respective nonconductive states, and flowing a current through theresistive sense element of the selected unit cell from a source line toa bit line.
 13. The apparatus of claim 1, wherein the NAND block isformed of n unit cells, and wherein the NAND block comprises a numbern-1 of said tortuous conductive paths between the respective resistivesense elements.
 14. An apparatus, comprising: a plural number n ofnon-volatile memory unit cells in a semiconductor memory array, eachunit cell comprising a resistive sense element connected in parallelwith a switching element; and a plural number of n-1 tortuous conductivepaths interposed between the resistive sense elements, each said pathcomprising a substantially vertically extending conductive structurethat extends between the associated resistive sense elements to provideoperational isolation of said elements.
 15. The apparatus of claim 14,wherein the resistive sense elements are characterized as resistiverandom access memory (RRAM) memory cells.
 16. The apparatus of claim 14,wherein the resistive sense elements are characterized as spin-torquetransfer random access memory (STRAM) memory cells.
 17. The apparatus ofclaim 14, wherein the switching elements are characterized as fieldeffect transistors, and wherein each adjacent pair of said transistorsshares a common source or drain region, respectively, formed in a basesubstrate.
 18. A data storage device comprising: a non-volatilesemiconductor memory array comprising a plurality of NAND blocks, eachNAND block arranged as a plurality of unit cells each having a resistivesense element connected in parallel with a switching element, theresistive sense elements connected in series to form a first serial pathand the switching elements connected in series to form a second serialpath parallel to the first serial path, each resistive sense elementserially connected to an adjacent resistive sense element in the blockby a tortuous conductive path having a portion that extendssubstantially vertically therebetween to provide operational isolationof said element; and a controller coupled to the semiconductor memoryarray which directs an access operation upon a selected unit cell of aselected NAND block to determine a storage state thereof by placing ablock select switching element of the selected NAND block into aconductive state, placing the switching element of the selected unitcell into a non-conductive state while placing the remaining switchingelements of the remaining unit cells into respective nonconductivestates, and flowing a current through the resistive sense element of theselected unit cell from a source line to a bit line.
 19. The datastorage device of claim 18, wherein the switching elements arecharacterized as field effect transistors, and wherein each adjacentpair of said transistors shares a common source or drain region,respectively, formed in a base substrate.
 20. The data storage device ofclaim 18, wherein each NAND block is formed of n said unit cells and n-1said conductive tortuous paths.